IXFJ32N50Q IXYS, IXFJ32N50Q Datasheet - Page 3

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IXFJ32N50Q

Manufacturer Part Number
IXFJ32N50Q
Description
MOSFET N-CH 500V 32A TO-220
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFJ32N50Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
153nC @ 10V
Input Capacitance (ciss) @ Vds
3950pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
3950
Qg, Typ, (nc)
153
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-268 (I3 - PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
2.8
2.4
2.0
1.6
1.2
0.8
80
70
60
50
40
30
20
10
40
32
24
16
0
8
0
-50
0
0
Figure 3. R
Figure 1. Output Characteristics at 25
Figure 5. Drain Current vs. Case Temperature
V
-25
T
GS
J
10
= 25
= 10V
4
O
C
0
DS(on)
20
T
I
D
25
C
Tj=125
V
8
normalized to 15A/25
- Amperes
- Degrees C
DS
V
GS
- Volts
30
=10V
50
0
9V
8V
7V
C
12
Tj=25
75
40
0
100 125 150
C
16
50
6V
5V
O
C vs. I
O
60
C
20
D
2.8
2.4
2.0
1.6
1.2
0.8
50
40
30
20
10
50
40
30
20
10
0
0
25
2
0
Figure 6. Admittance Curves
Figure 2. Output Characteristics at 125
Figure 4. R
V
T
GS
J
= 125
= 10V
50
4
3
O
C
DS(on)
T
J
T
= 125
J
V
V
75
8
- Degrees C
GS
DS
normalized to 15A/25
I
o
D
C
- Volts
- Volts
= 32A
V
4
GS
IXFJ 32N50Q
= 9V
12
100
8V
7V
I
D
= 16A
5
16
125
T
J
= 25
o
5V
4V
6V
C
O
C vs. T
150
3 - 4
20
O
6
C
J

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