IXFH12N100Q IXYS, IXFH12N100Q Datasheet - Page 3

• Manufacturer Part Number: IXFH12N100Q
• Description: MOSFET N-CH 1000V 12A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH12N100Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.05
• Ciss, Typ, (pf): 2900
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Figure 3. R
20
16
12
16
12
Figure 5. Drain Current vs. Case Temperature
8
4
0
8
4
0
-50
0
0
Figure 1. Output Characteristics at 25
V
-25
GS
T
J
= 10V
= 25
4
DS(on)
4
0
O
C
normalized to value at I
T
I
D
25
C
V
8
8
- Amperes
- Degrees C
DS
- Volts
T
50
J
= 25
T
V
J
12
12
GS
= 125
O
75
= 10V
C
9V
8V
7V
O
C
100 125 150
16
16
5V
D
6V
= 12A
O
C
20
20
2.5
2.0
1.5
1.0
12
10
Figure 4. R
15
12
8
6
4
2
0
9
6
3
0
Figure 2. Output Characteristics at 125
3
25
0
T
Figure 6. Admittance Curves
J
= 125
V
50
6
DS(on)
GS
4
= 10V
IXFH/IXFT 12N100Q
IXFH/IXFT 10N100Q
O
T
C
J
normalized to value at I
T
= 125
J
V
V
12
75
- Degrees C
GS
DS
I
I
D
o
D
C
= 12A
- Volts
= 6A
- Volts
5
V
GS
100
= 10V
18
9V
8V
7V
T
J
6
= 25
125
24
o
C
D
5V
O
6V
= 12A
C
150
7
30