IXKC40N60C IXYS, IXKC40N60C Datasheet
IXKC40N60C
Manufacturer Part Number
IXKC40N60C
Description
MOSFET N-CH 600V 28A ISOPLUS220
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKC40N60C.pdf
(4 pages)
Specifications of IXKC40N60C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
95 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
3.9V @ 2mA
Gate Charge (qg) @ Vgs
230nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.96 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
28
Rds(on), Max, Tj=25°c, (?)
0.095
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
175
Trr, Max, (ns)
800
Trr, Typ, (ns)
500
Pd, (w)
250
Rthjc, Max, (k/w)
0.6
Visol, Rms, (v)
2500
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXKC40N60C
Manufacturer:
FSC
Quantity:
5 000
CoolMOS
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low R
Ultra low gate charge
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
E
E
Symbol
R
V
I
I
C
C
Q
Q
Q
t
t
t
t
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
DSS
AS
AR
DSon
iss
oss
thJC
g
gs
gd
DSon
, high V
Conditions
T
T
T
single pulse; I
repetitive;
Conditions
V
V
V
V
V
f = 1 MHz
V
V
I
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 40 A; R
= 25°C
= 90°C
= 25°C
= 600 V; V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 13 V; V
GS
™ 1)
; I
DSS
D
DS
G
D
= 2 mA
DS
= 1.5 Ω; T
= 28 A
= 25 V
GS
MOSFET
I
DS
D
D
= 380 V
Power MOSFET
= 10 A; T
= 20 A; T
= 0 V
= 0 V
DS
= 350 V; I
VJ
= 125°C
C
C
T
T
= 25°C
= 25°C
VJ
VJ
D
(T
= 25°C
= 150°C
= 40 A
VJ
= 25°C, unless otherwise specifi ed)
min.
2.1
Characteristic Values
4800
1560
Maximum Ratings
typ.
175
4.5
80
22
66
10
67
5
G
max.
± 20
19.2
600
690
500
200
230
3.9
0.6
28
95
50
1
S
D
K/W
mΩ
mJ
mJ
nC
nC
nC
µA
µA
nA
pF
pF
ns
ns
ns
ns
V
V
A
A
V
V
I
R
ISOPLUS220
Features
• Silicon chip on Direct-Copper-Bond
• CoolMOS
• Enhanced total power density
Applications
• Switched mode power supplies
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
• Space savings
• High power density
• High reliability
D25
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
- 3rd generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
- low thermal resistance
(SMPS)
no screws or isolation foils required
DSS
DS(on) max
inductive switching (UIS)
due to reduced chip thickness
E72873
1)
G
CoolMOS
D
Infi neon Technologies AG.
S
™ 1)
IXKC 40N60C
TM
power MOSFET
= 600 V
= 28 A
= 95 mΩ
™
is a trademark of
isolated tab
20080523a
1 - 4
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IXKC40N60C Summary of contents
Page 1
... 380 1.5 Ω d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved G Maximum Ratings 600 ± 19.2 = 25°C 690 C = 25°C C Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. ...
Page 2
... RMS leads-to-tab, 50/60 Hz minute ISOL F mounting force C Symbol Conditions R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. max. 40 0.9 1 ...
Page 3
... TM ISOPLUS220 Outline 250 200 150 100 120 T [°C] C Fig. 1 Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved * Note 160 140 8 V 120 T = 25°C J 100 160 V [V] DS Fig. 2 Typ. output characteristics ...
Page 4
... 150°C (98 [V] SD Fig. 7 Forward characteristic of reverse diode 700 650 140 T [°C] J Fig. 10 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved [°C] J Fig. 5 Drain-source on-state resistance pulsed max V DS max ...