IXTH12N100 IXYS, IXTH12N100 Datasheet - Page 4

• Manufacturer Part Number: IXTH12N100
• Description: MOSFET N-CH 1000V 12A TO-247
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTH12N100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.05 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.05
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 1000
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
D=0.2
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.5
D=0.01
D=0.1
D=0.05
D=0.02
Single Pulse
V
I
I
D
G
DS
= 6A
= 10mA
25
= 500V
5
Gate Charge - nCoulombs
C
C
C
50
iss
oss
rss
0.0001
V
10
DS
f = 1MHz
V
DS
75
- Volts
= 25V
15
100
125
0.001
20
150
Time - Seconds
0.01
0.1
10
20
18
16
14
12
10
1
8
6
4
2
0
0.0
Fig.8 Forward Bias Safe Operating Area
1
Fig.10 Source Current vs. Source
IXTH 10 N100
IXTM 10 N100
Limited by R
0.2
0.1
to Drain Voltage
T
J
= 125°C
0.4
DS(on)
10
0.6
V
V
SD
DS
- Volts
- Volts
0.8
T
J
1
100
= 25°C
IXTH 12 N100
IXTM 12 N100
1.0
1.2
1000
1.4
10
10µs
100µs
1ms
10ms
100ms
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