IXFX120N30T IXYS, IXFX120N30T Datasheet - Page 4
![MOSFET N-CH 120A 300V PLUS247](/photos/5/60/56032/ixfx120n30t_sml.jpg)
IXFX120N30T
Manufacturer Part Number
IXFX120N30T
Description
MOSFET N-CH 120A 300V PLUS247
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet
1.IXFK120N30T.pdf
(5 pages)
Specifications of IXFX120N30T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
265nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
120
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
20000
Qg, Typ, (nc)
265
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
100
200
180
160
140
120
100
50
80
60
40
20
0
0
0.0
3.2
0
f
0.2
3.6
= 1 MHz
5
Fig. 9. Forward Voltage Drop of
0.4
4.0
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
0.6
4.4
J
= 125ºC
Intrinsic Diode
15
V
V
SD
DS
V
0.8
4.8
GS
- Volts
- Volts
T
20
J
- Volts
= 125ºC
1.0
5.2
- 40ºC
25ºC
T
25
J
1.2
5.6
= 25ºC
C iss
C oss
C rss
30
6.0
1.4
35
1.6
6.4
1.8
6.8
40
1,000.0
100.0
10.0
200
180
160
140
120
100
1.0
0.1
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
R
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
V
I
I
DS(
J
C
20
D
G
DS
30
= 150ºC
= 25ºC
on
= 60A
= 10mA
= 150V
)
Limit
40
60
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
90
10
Q
I
D
G
80
- Amperes
- NanoCoulombs
T
V
120
J
DS
= - 40ºC
100
- Volts
150
25ºC
125ºC
120
IXFK120N30T
IXFX120N30T
180
100
140
1ms
210
160
IXYS REF: F_120N30T(9W)3-23-09
25µs
100µs
240
180
1000
200
270