IXFX120N30T IXYS, IXFX120N30T Datasheet - Page 4

• Manufacturer Part Number: IXFX120N30T
• Description: MOSFET N-CH 120A 300V PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFX120N30T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 265nC @ 10V
• Input Capacitance (ciss) @ Vds: 20000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 20000
• Qg, Typ, (nc): 265
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
100
200
180
160
140
120
100
50
80
60
40
20
0
0
0.0
3.2
0
f
0.2
3.6
= 1 MHz
5
Fig. 9. Forward Voltage Drop of
0.4
4.0
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
0.6
4.4
J
= 125ºC
Intrinsic Diode
15
V
V
SD
DS
V
0.8
4.8
GS
- Volts
- Volts
T
20
J
- Volts
= 125ºC
1.0
5.2
- 40ºC
25ºC
T
25
J
1.2
5.6
= 25ºC
C iss
C oss
C rss
30
6.0
1.4
35
1.6
6.4
1.8
6.8
40
1,000.0
100.0
10.0
200
180
160
140
120
100
1.0
0.1
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
R
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
V
I
I
DS(
J
C
20
D
G
DS
30
= 150ºC
= 25ºC
on
= 60A
= 10mA
= 150V
)
Limit
40
60
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
90
10
Q
I
D
G
80
- Amperes
- NanoCoulombs
T
V
120
J
DS
= - 40ºC
100
- Volts
150
25ºC
125ºC
120
IXFK120N30T
IXFX120N30T
180
100
140
1ms
210
160
IXYS REF: F_120N30T(9W)3-23-09
25µs
100µs
240
180
1000
200
270