IXFR140N30P IXYS, IXFR140N30P Datasheet

MOSFET N-CH 300V 70A ISOPLUS247

IXFR140N30P

Manufacturer Part Number
IXFR140N30P
Description
MOSFET N-CH 300V 70A ISOPLUS247
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFR140N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
14800pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.026 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
82 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
70
Rds(on), Max, Tj=25°c, (?)
0.026
Ciss, Typ, (pf)
14800
Qg, Typ, (nc)
185
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
360
Rthjc, Max, (ºc/w)
0.35
Package Style
ISOPLUS247™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFR140N30P
Manufacturer:
POWER
Quantity:
20 000
Polar
HiPerFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
Mounting force
V
V
V
V
V
V
Test Conditions
S
ISOL
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
TM
DM
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 8mA
= 70A, Note 1
DS
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
t = 1min
t = 1s
T
J
JM
= 125°C
IXFR140N30P
20..120 / 4.5..27
-55 ... +150
-55 ... +150
300
3.0
Maximum Ratings
Characteristic Values
Min.
2500
3000
300
300
±20
±30
300
300
150
300
260
70
70
20
5
Typ.
5
20
±200 nA
Max.
5.0
25 μA
26 mΩ
1 mA
N/lb.
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
Features
Advantages
V
I
R
t
ISOPLUS247 (IXFR)
G = Gate
S = Source
D25
rr
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
≤ ≤ ≤ ≤ ≤ 26mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
= 300V
= 70A
D = Drain
Isolated Tab
DS99570F(5/08)

Related parts for IXFR140N30P

IXFR140N30P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS 10V 70A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFR140N30P Maximum Ratings 300 = 1MΩ 300 GS ±20 ±30 70 300 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 t = 1min 2500 3000 20..120 / 4.5..27 5 Characteristic Values Min ...

Page 2

... D 20 185 , I = 70A 72 DSS D 60 0.15 Characteristic Values Min. Typ. JM 0.6 6.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFR140N30P Max. ISOPLUS247 (IXFR) Outline 0.42 °C/W °C/W Max. 140 A 560 A 1.3 V 200 ns μC A 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... IXYS CORPORATION, All rights reserved 280 = 10V 8V 240 200 7V 160 120 6V 5V 2.5 3.0 3.5 4.0 = 10V 70A Value 125º 25ºC J 160 200 240 280 IXFR140N30P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.8 2 140A 2 ...

Page 4

... Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 5.5 6.0 6.5 7 25ºC J 1.0 1.1 1.2 1.3 1.4 1,000 C iss C oss C rss IXFR140N30P Fig. 8. Transconductance 140 120 100 40ºC J 25ºC 125º 100 120 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFR140N30P 1 10 IXYS REF: F_140N30P (93)5-13-08-B ...

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