IXFX90N20Q IXYS, IXFX90N20Q Datasheet
IXFX90N20Q
Manufacturer Part Number
IXFX90N20Q
Description
MOSFET N-CH 200V 90A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFX90N20Q.pdf
(2 pages)
Specifications of IXFX90N20Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
50 s
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.022
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFX90N20Q
Manufacturer:
IXYS
Quantity:
6 285
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2002 IXYS All rights reserved
Symbol
V
V
I
I
R
HiPerFET
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low t
DM
AR
D25
GSS
DSS
J
stg
L
DGR
GS
GSM
AR
D
JM
DSS
AS
GS(th)
d
DSS
DS(on)
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
V
V
V
Note 1
Test Conditions
V
S
V
J
J
C
C
C
C
C
J
C
GS
GS
DS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= V
= 0 V, I
= 0 V
= 10 V, I
= 20 V, V
= V
I
150 C, R
DM
GS
, di/dt
DSS
TM
, I
D
D
= 4mA
= 250uA
D
= 0.5 • I
G
DS
100 A/ s, V
= 2
= 0
TO-264
PLUS 247
TO-264
D25
GS
= 1 M
DD
(T
T
J
J
V
= 25 C, unless otherwise specified)
= 125 C
DSS
JM
200
min.
IXFX 90N20Q
IXFK 90N20Q
2.0
rr
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.4/6 Nm/lb.in.
200
200
360
500
150
300
2.5
20
30
90
90
60
10
5
6
max.
100
100 nA
22 m
4.0 V
2 mA
V/ns
mJ
W
C
C
C
C
V
V
V
V
A
A
A
g
g
J
V
A
PLUS 247
G = Gate
S = Source
TO-264 AA (IXFK)
Features
• IXYS advanced low Q
• Low gate charge and capacitances
• International standard packages
• Low R
• Rated for unclamped Inductive load
• Molding epoxies meet UL 94 V-0
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
• Space savings
• High power density
V
R
- easier to drive
- faster switching
switching (UIS) rated
flammability classification
I
power supplies
mounting
t
D25
rr
DSS
DS(on)
DS (on)
200 s
G
TM
D
TM
G
(IXFX)
package for clip or spring
=
=
=
D
S
D = Drain
TAB = Drain
g
200
process
90
22 m
98676B (9/02)
(TAB)
(TAB)
A
V
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IXFX90N20Q Summary of contents
Page 1
... 4mA GS(th GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2002 IXYS All rights reserved IXFX 90N20Q IXFK 90N20Q rr Maximum Ratings 200 = 1 M 200 360 2 DSS 500 -55 ... +150 150 -55 ... +150 300 0.4/6 Nm/lb.in Characteristic Values ( unless otherwise specified) J min. typ. ...
Page 2
... Note: 1. Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. Note 1 40 ...