IXFH15N80 IXYS, IXFH15N80 Datasheet
IXFH15N80
Specifications of IXFH15N80
Available stocks
Related parts for IXFH15N80
IXFH15N80 Summary of contents
Page 1
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXFH14N80 Family IXFH15N80 Maximum Ratings 800 = 1 M 800 14N80 14 15N80 15 14N80 56 JM 15N80 60 14N80 14 15N80 DSS 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. ...
Page 2
... -di/dt = 100 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test 8 14 3965 4870 315 395 73 ...
Page 3
... I DS(on) 2 10V 2 125 C J 2.2 2.0 1.8 1.6 1 1.2 1.0 0 Amperes D Figure 5. Drain Current vs. Case Temperature 20 16 IXFH15N80 12 IXFH14N80 -50 - Degrees C C © 2002 IXYS All rights reserved O C Figure 2. Output Characteristics at 125 Figure 4. R value vs. I D25 D 2.6 2.4 2 ...
Page 4
... D=0.2 D=0.1 D=0.05 D=0.02 0.01 Single pulse D=0.01 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5000 2500 1000 500 250 100 50 200 250 O ...