IXFK20N120 IXYS, IXFK20N120 Datasheet - Page 2

• Manufacturer Part Number: IXFK20N120
• Description: MOSFET N-CH 1200V 20A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK20N120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 7400pF @ 25V
• Power - Max: 780W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 780 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 0.75
• Ciss, Typ, (pf): 7400
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 780
• Rthjc, Max, (ºc/w): 0.16
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Note: 1. Pulse width limited by T
IXYS MOSFETs and IGBTs are covered by one or more
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
of the following U.S. patents:
RM
d(on)
d(off)
f
S
SM
r
rr
fs
thCK
SD
iss
oss
rss
g(on)
gs
gd
thJC
RM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
GS
DS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
= I
, V
GS
GS
G
GS
S
= 1 Ω (External),
, -di/dt = 100 A/µs, V
= 0 V, V
= 10 V, V
= 10 V, V
GS
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
JM
= 0.5 • V
= 0.5 • V
D25
JM
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
Note 2
R
(T
DSS
DSS
(T
= 100 V
J
J
, I
, I
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
15
Characteristic Values
Characteristic Values
7400
0.15
typ.
typ.
550
100
160
1.4
27
25
45
75
20
35
60
8
0.16
max.
max.
300
1.5
20
80
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
ns
ns
ns
ns
S
A
A
V
A
TO-264 AA Outline
PLUS 247
Terminals:
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
TM
Millimeter
Millimeter
5.45 BSC
5.46 BSC
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Outline
IXFK 20N120
IXFX 20N120
26.16
19.96
20.83
Max.
21.34
16.13
20.32
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
6,534,343
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
6,583,505
Max.
.786
.820
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.010
.010
.102
.144
.247
.342
.170
.090
.248
.072