IXFX21N100Q IXYS, IXFX21N100Q Datasheet - Page 2

• Manufacturer Part Number: IXFX21N100Q
• Description: MOSFET N-CH 1000V 21A PLUS 247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX21N100Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 21
• Rds(on), Max, Tj=25°c, (?): 0.50
• Ciss, Typ, (pf): 5900
• Qg, Typ, (nc): 170
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
GS
DS
= I
I
F
S
= 0 V
= 20 V; I
V
V
R
V
= I
, V
GS
GS
GS
G
S
= 1 Ω (External),
GS
,-di/dt = 100 A/µs, V
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
R
Note 1
DSS
DSS
(T
(T
= 100 V
J
J
, I
, I
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
16
Characteristic Values
Characteristic Values
4,835,592
4,850,072
6900
0.15
typ.
typ.
550
170
1.4
22
90
21
18
60
12
38
75
8
4,881,106
4,931,844
0.26
max.
max.
250
1.5
21
84
K/W
K/W
5,017,508
5,034,796
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
TO-264 AA Outline
PLUS 247
5,049,961
5,063,307
Terminals:
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXFK 21N100Q
IXFX 21N100Q
20.80
15.75
19.81
25.91
19.81
20.32
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
TM
Millimeter
5,187,117
5,237,481
Millimeter
5.45 BSC
5.46 BSC
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Outline
26.16
19.96
20.83
Max.
21.34
16.13
20.32
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
5,486,715
5,381,025
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
6,306,728B1