IXFR40N50Q2 IXYS, IXFR40N50Q2 Datasheet - Page 5

• Manufacturer Part Number: IXFR40N50Q2
• Description: MOSFET N-CH 500V 29A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR40N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 320W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 28 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 29 A
• Power Dissipation: 320 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 29
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 4850
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 320
• Rthjc, Max, (ºc/w): 0.39
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2467741A

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