IXTK140N30P IXYS, IXTK140N30P Datasheet - Page 4

• Manufacturer Part Number: IXTK140N30P
• Description: MOSFET N-CH 300V 140A TO-264
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTK140N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 5V @ 500µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 14800pF @ 25V
• Power - Max: 1040W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 140
• Rds(on), Max, Tj=25°c, (?): 0.240
• Ciss, Typ, (pf): 14800
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 250
• Pd, (w): 1040
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4597844

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
300
250
200
150
100
180
160
140
120
100
1,000
50
80
60
40
20
100
0
0
10
0.4
3.5
0
0.5
f
4.0
= 1 MHz
Fig. 9. Forward Voltage Drop of
5
0.6
T
Fig. 7. Input Admittance
J
10
4.5
0.7
Fig. 11. Capacitance
= 125ºC
Intrinsic Diode
V
0.8
15
V
SD
V
GS
5.0
T
DS
J
- Volts
- Volts
= 125ºC
- Volts
0.9
- 40ºC
20
25ºC
T
5.5
J
1.0
= 25ºC
25
C iss
C oss
C rss
1.1
6.0
30
1.2
6.5
35
1.3
1.4
7.0
40
1,000
140
120
100
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
10
0
0
T
J
R
Fig. 12. Forward-Bias Safe Operating Area
= - 40ºC
V
I
I
DS(on)
D
G
DS
20
125ºC
20
= 70A
= 10mA
25ºC
= 150V
Limit
40
40
Fig. 8. Transconductance
60
60
Fig. 10. Gate Charge
Q
G
DC
- NanoCoulombs
I
D
V
80
80
- Amperes
DS
- Volts
100
100
100
IXTK140N30P
10ms
120
120
1ms
140
140
25µs
100µs
160
160
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
180
180
1000
200
200