IXFR50N50 IXYS, IXFR50N50 Datasheet
IXFR50N50
Manufacturer Part Number
IXFR50N50
Description
MOSFET N-CH 500V 43A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR50N50.pdf
(2 pages)
Specifications of IXFR50N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
43 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
43
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR50N50
Manufacturer:
TOSHIBA
Quantity:
20 000
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
Single Die MOSFET
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
© 2002 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
Test Conditions
Test Conditions
V
V
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
GS
DS
GS
= V
= 0 V, I
TM
DM
GS
, I
DSS
Power MOSFETs
D
D
= 1mA
= 8mA
D
TM
G
DS
T
GS
DD
J
J
J
DSS
JM
min.
500
2.5
Characteristic Values
Maximum Ratings
IXFR 50N50
IXFR 55N50
typ.
max.
4.5 V
V
ISOPLUS 247
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
500 V
500 V
t
rr
V
DSS
250 ns
DS (on)
G
D
TM
43 A
48 A
I
D25
TM
98588B (04/02)
100 m
R
90 m
DS(on)
Related parts for IXFR50N50
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFR50N50 Summary of contents
Page 1
... Weight Symbol Test Conditions 1mA DSS 8mA GS(th GSS DSS DS DSS GS R DS(on © 2002 IXYS All rights reserved IXFR 50N50 IXFR 55N50 Maximum Ratings DSS Characteristic Values J min. typ. max. 500 2 DSS D25 500 500 250 ns rr ISOPLUS 247 Features ...
Page 2
... Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values J min. typ. max. DSS D T DSS D T Characteristic Values J min. typ. max 4,835,592 4,881,106 4,850,072 ...