IXFM40N30 IXYS, IXFM40N30 Datasheet - Page 4

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IXFM40N30

Manufacturer Part Number
IXFM40N30
Description
MOSFET N-CH 300V 40A TO-204AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFM40N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
300W
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.088 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.088
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
177
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-204
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
4500
4000
3500
3000
2500
2000
1500
1000
0.001
0.01
500
0.1
10
0.00001
8
6
4
2
0
0
1
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.1
D=0.2
D=0.5
D=0.05
D=0.01
D=0.02
V
I
I
Single Pulse
D
G
DS
= 21A
= 10mA
25
= 150V
5
Gate Charge - nCoulombs
50
75
0.0001
10
Vds - Volts
f = 1 MHz
V
DS
100 125 150 175 200
= 25V
C
C
C
oss
rss
iss
15
20
0.001
25
Time - Seconds
0.01
100
10
80
70
60
50
40
30
20
10
1
0
0.0
Fig.10 Source Current vs. Source
1
Fig.8 Forward Bias Safe Operating Area
Limited by R
IXFH 35N30
IXFM 35N30
0.2
0.1
0.4
DS(on)
T
J
= 125°C
0.6
10
V
V
DS
SD
0.8
- Volts
- Volts
1
T
1.0
J
= 25°C
IXFH 40N30
IXFM 40N30
1.2
100
1.4
1.6
300
10
10µs
100µs
1ms
10ms
100ms
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