IXFX50N50 IXYS, IXFX50N50 Datasheet

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IXFX50N50

Manufacturer Part Number
IXFX50N50
Description
MOSFET N-CH 500V 50A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFX50N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
520W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX50N50
Manufacturer:
IXYS
Quantity:
90
Part Number:
IXFX50N50
Manufacturer:
IXYS
Quantity:
35 500
HiPerFET
Power MOSFETs
Single Die MOSFET
© 2002 IXYS All rights reserved
Preliminary data sheet
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
DM
D25
AR
GS(th)
JM
stg
L
DSS
DS(on)
GSM
AR
AS
J
DSS
DGR
GS
D
d
V
V
GS
DS
= 0 V, I
= V
Test Conditions
Test Conditions
S
GS
C
C
C
C
C
C
GS
DS
J
J
J
GS
GS
, I
D
D
DM
= 1mA
= 8mA
DSS
TM
D
G
DS
D25
GS
DD
J
J
J
DSS
JM
500
min.
2.5
Characteristic Values
IXFX 50N50
IXFX 55N50
Maximum Ratings
typ.
max.
4.5
V
V
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
l
Advantages
l
l
l
PLUS 247
(IXFX)
500 V 50 A 100 m
500 V 55 A
t
V
rr
DSS
DS (on)
250 ns
G
TM
D
TM
I
D25
TM
R
98507D (04/02)
80 m
DS(on)
D (TAB)

Related parts for IXFX50N50

IXFX50N50 Summary of contents

Page 1

... Test Conditions 1mA DSS 8mA GS(th GSS DSS DS DSS GS R DS(on D25 © 2002 IXYS All rights reserved IXFX 50N50 IXFX 55N50 Maximum Ratings DSS Characteristic Values J min. typ. max. 500 2.5 4 DSS D25 DS(on) 500 100 m 500 250 ns rr PLUS 247 ...

Page 2

... R thJC R thCK Source-Drain Diode Symbol Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values J min. typ. max. DSS D D25 DSS D D25 Characteristic Values J min. typ. max IXFX 50N50 IXFX 55N50 TM PLUS 247 Outline Dim. Millimeter Inches Min ...

Page 3

... Figure 5. Drain Current vs. Case Temperature IXF_50N50 -50 -50 -25 - Degrees C - Degrees © 2002 IXYS All rights reserved O C 100 V = 10V 100 100 120 120 Figure 6. Admittance Curves 100 IXF_55N50 100 125 150 100 125 150 IXFX 50N50 IXFX 55N50 Figure 2. Output Characteristics at 125 V ...

Page 4

... 0.2 0.4 0.6 Figure10. Forward Bias Safe Operating Area 1.00 0.10 0.01 0. IXYS reserves the right to change limits, test conditions, and dimensions. 10000 1000 100 250 300 350 O C 0.8 1 Pulse Width - Seconds IXFX 50N50 IXFX 55N50 Figure 8. Capacitance Curves Ciss ...

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