IXFX38N80Q2 IXYS, IXFX38N80Q2 Datasheet - Page 5

• Manufacturer Part Number: IXFX38N80Q2
• Description: MOSFET N-CH 800V 38A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX38N80Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 8340pF @ 25V
• Power - Max: 735W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.22 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 735 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 38
• Rds(on), Max, Tj=25°c, (?): 0.22
• Ciss, Typ, (pf): 9500
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 735
• Rthjc, Max, (ºc/w): 0.17
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFK 38N80Q2
IXFN 38N80Q2
IXFX 38N80Q2
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0 . 1 8
0 . 1 6
0 . 1 4
0 . 1 2
0 . 1 0
0 . 0 8
0 . 0 6
0 . 0 4
0 . 0 2
0 . 0 0
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved