IXFL39N90 IXYS, IXFL39N90 Datasheet
IXFL39N90
Manufacturer Part Number
IXFL39N90
Description
MOSFET N-CH 900V 34A ISOPLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFL39N90.pdf
(2 pages)
Specifications of IXFL39N90
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 19.5A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
375nC @ 10V
Input Capacitance (ciss) @ Vds
13400pF @ 25V
Power - Max
580W
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
34 A
Power Dissipation
580 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
39
Rds(on), Max, Tj=25°c, (?)
0.22
Ciss, Typ, (pf)
9200
Qg, Typ, (nc)
390
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
ISOPLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
ISOPLUS264
(Electrically Isolated Backside)
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
GSM
AR
AS
J
stg
GH(th)
DSS
DGR
GS
D
ISOL
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Test Conditions
V
V
V
V
V
V
Notes 2, 3
S
ISOL
C
C
C
C
C
C
GS
GS
J
J
J
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
Power MOSFETs
D
D
DC
D
TM
= 3 mA
= 8 mA
, V
G
= I
= 2 Ω
DS
T
t = 1 min
t = 1 s
= 0
GS
= 1 MΩ
T
T
DD
(T
J
J
J
≤ V
= 25°C
= 125°C
= 25°C, unless otherwise specified)
rr
DSS
min.
900
2.5
Characteristic Values
-40 ... +150
-40 ... +150
IXFL 39N90
Maximum Ratings
typ.
2500
3000
900
900
±20
±30
154
580
150
34
39
64
4
5
8
max.
±200
100
220
5.0
2
V/ns
mΩ
mJ
mA
° C
° C
V~
V~
nA
µA
°C
W
V
V
A
A
A
V
V
V
V
g
J
ISOPLUS-264
Features
Applications
Advantages
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
G = Gate
S = Source
V
I
R
t
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
TM
= 900 V
=
= 220 mΩ Ω Ω Ω Ω
< ns
D = Drain
TM
34 A
(Backside)
process
DS99094(10/03)
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IXFL39N90 Summary of contents
Page 1
... GH(th ± GSS DSS DS DSS DS(on Notes 2, 3 © 2003 IXYS All rights reserved IXFL 39N90 rr Maximum Ratings 900 = 1 MΩ 900 GS ±20 ±30 34 154 ≤ DSS 580 -40 ... +150 150 -40 ... +150 2500 3000 8 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
Page 2
... Notes: 1. Pulse width limited by T JM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 Test current 19 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...