IXFK100N10 IXYS, IXFK100N10 Datasheet - Page 4
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IXFK100N10
Manufacturer Part Number
IXFK100N10
Description
MOSFET N-CH 100V 100A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK150N10.pdf
(4 pages)
Specifications of IXFK100N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
9000pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
9000
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.24
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
0.01
150
125
100
0.5
0.1
12
10
75
50
25
0.001
8
6
4
2
0
0
0.00
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
V
I
I
D
G
DS
= 75A
= 1mA
50
= 50V
0.25
to Drain Voltage
Gate Charge - nCoulombs
100 150 200 250 300 350 400
0.50
V
T
J
SD
= 125°C
0.75
- Volt
1.00
T
J
= 25°C
1.25
0.01
1.50
Time - Seconds
12000
10000
8000
6000
4000
2000
0
Fig.8 Capacitance Curves
0
0.1
5
10
V
DS
- Volts
15
C
IXFK 100N10
IXFN 150N10
f = 1MHz
V
C
C
iss
DS
oss
rss
= 25V
20
25
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