IXFB100N50P IXYS, IXFB100N50P Datasheet - Page 4

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IXFB100N50P

Manufacturer Part Number
IXFB100N50P
Description
MOSFET N-CH 500V 100A PLUS264
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFB100N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.049 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
100 A
Power Dissipation
1250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
100
Rds(on), Max, Tj=25°c, (?)
0.049
Ciss, Typ, (pf)
20000
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.1
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB100N50P
Manufacturer:
ATMEL
Quantity:
363
Part Number:
IXFB100N50P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
160
140
120
100
300
250
200
150
100
80
60
40
20
50
100
0
0
0.4
4
0
f = 1 MHz
4.5
5
Fig. 9. Forward Voltage Drop of
0.6
T
J
10
= 125ºC
Fig. 7. Input Admittance
Fig. 11. Capacitance
5
0.8
Intrinsic Diode
15
V
V
V
GS
SD
5.5
DS
T
- Volts
- Volts
- Volts
T
J
J
= 125ºC
20
1
= 25ºC
- 40ºC
25ºC
6
25
1.2
C iss
C oss
C rss
6.5
30
1.4
7
35
40
7.5
1.6
1,000
100
150
135
120
105
10
10
90
75
60
45
30
15
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
J
T
T
Fig. 12. Forward-Bias Safe Operating Area
R
V
I
I
= - 40ºC
J
C
D
G
DS(on)
DS
125ºC
25
= 150ºC
20
= 25ºC
= 50A
25ºC
= 10mA
= 250V
Limit
50
40
Fig. 8. Transconductance
75
Q
Fig. 10. Gate Charge
60
G
- NanoCoulombs
I
D
V
100
DS
- Amperes
80
- Volts
DC
100
125
100
IXFB 100N50P
150
120
175
140
200
160
25µs
100µs
225
1ms
10ms
1000
250
180

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