IXFG55N50 IXYS, IXFG55N50 Datasheet - Page 2

• Manufacturer Part Number: IXFG55N50
• Description: MOSFET N-CH 500V 48A ISO264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFG55N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: ISO264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 48
• Rds(on), Max, Tj=25°c, (?): 0.09
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.30
• Package Style: ISO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: 1. Pulse test, t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
of the following U.S. patents:
RM
d(on)
d(off)
f
S
SM
r
rr
fs
iss
oss
rss
g(on)
gd
thJC
thCK
SD
RM
gs
2. I
T
test current: I
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
F
GS
DS
= I
I
F
= 25A,-di/dt = 100 A/ s, V
S
= 0 V
= 10 V; I
V
V
R
V
, V
GS
GS
GS
G
= 1
GS
= 0 V, V
= 10 V, V
= 10 V, V
300 s, duty cycle d
= 0 V
T
= 27.5A
D
(External),
= I
DS
T
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
DSS
DSS
Note 1
(T
(T
R
J
J
, I
, I
= 100 V
2 %
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
D
D
= I
= I
JM
T
T
min.
min.
Characteristic Values
Characteristic Values
9400
1280
0.15
typ.
typ.
460
120
330
155
1.0
10
45
45
60
45
55
0.30
max.
max.
220
250
1.5
55
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
C
A
A
V
ISO264 OUTLINE
See IXFK55N50 data sheet for
characteristic curves.
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - No Connection
IXFG 55N50
6,534,343