IXFB120N50P2 IXYS, IXFB120N50P2 Datasheet - Page 2

• Manufacturer Part Number: IXFB120N50P2
• Description: MOSFET N-CH 500V 120A PLUS264
• Manufacturer: IXYS
• Series: PolarP2™ HiPerFET™r
• Type: PolarP2 HiPerFETr

Specifications of IXFB120N50P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 43 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 1890W
• Mounting Type: Through Hole
• Package / Case: PLUS264™
• Product: MOSFET Gate Drivers
• Rise Time: 13 ns
• Fall Time: 12 ns
• Supply Current: 120 A
• Maximum Power Dissipation: 1890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 80 ns
• Maximum Turn-on Delay Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 120 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.043
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 300
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1890
• Rthjc, Max, (ºc/w): 0.066
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Gate Input Resistance
Resistive Switching Times
V
R
I
-di/dt = 100A/μs
V
Test Conditions
V
V
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 0.5 • I
= 100A, V
= 70V
PRELIMINARY TECHNICAL INFORMATION
= 10V, V
= 1Ω (External)
= 0V, V
= 0V
= 10V, I
= 10V, V
D25
DS
GS
, V
D
DS
DS
= 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
GS
= 0.5 • V
4,835,592
4,881,106
= 0.5 • V
= 0V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
65
Min.
Characteristic Values
Min.
Characteristic Values
0.130
1860
Typ.
0.83
6,162,665
6,259,123 B1
6,306,728 B1
105
300
19
40
12
96
94
43
13
80
16.4
Typ.
2.0
0.066 °C/W
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
120
480
1.5
300 ns
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS264
6,727,585
6,771,478 B2 7,071,537
IXFB120N50P2
TM
(IXFB) Outline
7,005,734 B2
7,063,975 B2
7,157,338B2