IXFB210N20P IXYS, IXFB210N20P Datasheet - Page 3

• Manufacturer Part Number: IXFB210N20P
• Description: MOSFET N-CH 200V 210A PLUS264
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFB210N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 210A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 18600pF @ 25V
• Power - Max: 1500W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 210
• Rds(on), Max, Tj=25°c, (?): 0.0105
• Ciss, Typ, (pf): 18.6
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1500
• Rthjc, Max, (ºc/w): 0.1
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
220
200
180
160
140
120
100
220
200
180
160
140
120
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
80
60
40
20
80
60
40
20
0
0
0
0
0
0.2
0.5
V
Fig. 5. R
GS
Fig. 3. Output Characteristics @ T
50
Fig. 1. Output Characteristics @ T
= 10V
15V - - - -
0.4
1
DS(on)
100
0.6
1.5
Normalized to I
I
0.8
D
Drain Current
V
2
V
150
DS
DS
- Amperes
- Volts
- Volts
2.5
1
V
200
GS
T
J
1.2
V
= 175ºC
= 15V
3
GS
D
10V
8V
= 105A Value vs.
= 15V
T
10V
8V
J
1.4
3.5
250
= 25ºC
J
J
= 150ºC
= 25ºC
1.6
7V
6V
5V
7V
6V
5V
4
300
1.8
4.5
350
2
5
350
300
250
200
150
100
180
160
140
120
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
50
80
60
40
20
0
0
-50
-50
0
V
Fig. 2. Extended Output Characteristics @ T
GS
V
-25
-25
1
Fig. 4. R
GS
= 10V
External Lead Current Limit
= 15V
10V
8V
2
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
3
T
T
7V
6V
5V
Junction Temperature
25
J
C
25
- Degrees Centigrade
Normalized to I
- Degrees Centigrade
Case Temperature
4
V
DS
50
50
- Volts
IXFB210N20P
5
75
75
I
D
6
D
= 210A
= 105A Value vs.
100
100
7
125
125
8
I
D
J
= 105A
= 25ºC
150
150
9
175
175
10