IXTK21N100 IXYS, IXTK21N100 Datasheet - Page 4
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IXTK21N100
Manufacturer Part Number
IXTK21N100
Description
MOSFET N-CH 1000V 21A TO-264
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IXTK21N100.pdf
(4 pages)
Specifications of IXTK21N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4.5V @ 500µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
8400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTK21N100
Manufacturer:
SHINDENG
Quantity:
5 000
© 2000 IXYS All rights reserved
0.001
0.01
0.1
10
40
35
30
25
20
15
10
0.0001
1
9
8
7
6
5
4
3
2
1
0
5
0
0.0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
D=0.02
D=0.5
D=0.2
D=0.1
D=0.05
D=0.01
V
I
I
D
G
DS
0.2
= 12A
= 10mA
50
Single pulse
= 500V
to Drain Voltage
T
Gate Charge - nCoulombs
J
= 125°C
0.4
100
V
0.6
SD
0.001
150
- Volts
0.8
T
J
= 25°C
200
1.0
250
1.2
D = Duty Cycle
300
1.4
0.01
Pulse Width - Seconds
9000
8000
7000
6000
5000
4000
3000
2000
1000
0.1
0
Fig.8 Capacitance Curves
0
5
C
C
C
iss
oss
rss
V
10
DS
f = 1 MHz
V
DS
- Volts
1
= 25V
15
IXTK 21N100
IXTN 21N100
20
10
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