IXTB62N50L IXYS, IXTB62N50L Datasheet - Page 5
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IXTB62N50L
Manufacturer Part Number
IXTB62N50L
Description
MOSFET N-CH 500V 62A PLUS264
Manufacturer
IXYS
Datasheet
1.IXTB62N50L.pdf
(5 pages)
Specifications of IXTB62N50L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 20V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
550nC @ 20V
Input Capacitance (ciss) @ Vds
11500pF @ 25V
Power - Max
800W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
62 A
Power Dissipation
800 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
62
Rds(on), Max, Tj=25°c, (?)
0.100
Ciss, Typ, (pf)
11500
Qg, Typ, (nc)
550
Trr, Typ, (ns)
500
Pd, (w)
800
Rthjc, Max, (k/w)
0.156
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTB62N50L
Manufacturer:
ST
Quantity:
9 000
© 2007 IXYS CORPORATION, All rights reserved
1000
100
1.000
0.100
0.010
0.001
0.1
10
1
10
0.1
R
DS(
Operating Area @ T
Fig. 12. Forw ard-Bias Safe
on
)
Limit
V
D S
100
- Volts
Fig. 14. Maximum Transient Thermal Impedance
C
1
= 25ºC
DC
T
J
= 150ºC
100µs
1ms
25µs
10ms
Pulse Width - milliseconds
1000
10
1000
100
0.1
10
1
10
R
DS(
Operating Area @ T
Fig. 13. Forw ard-Bias Safe
on
)
Limit
V
100
D S
100
- Volts
IXYS REF: T_62N50L (9N) 4-05-07-A.xls
C
IXTB62N50L
= 90ºC
DC
T
J
= 150ºC
100µs
1ms
25µs
10ms
1000
1000