IXFB70N60Q2 IXYS, IXFB70N60Q2 Datasheet - Page 4

MOSFET N-CH 600V 70A PLUS264

IXFB70N60Q2

Manufacturer Part Number
IXFB70N60Q2
Description
MOSFET N-CH 600V 70A PLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFB70N60Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
265nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
70
Rds(on), Max, Tj=25°c, (?)
0.088
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
265
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.14
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB70N60Q2
Manufacturer:
ST
Quantity:
9 000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1 00000
1 0000
1 000
1 00
1 00
1 40
1 20
1 00
90
80
70
60
50
40
30
20
1 0
80
60
40
20
0
0
3.0
0.4
0
Fig. 9. Source Current vs. Source-To-Drain
f = 1 MHz
0.5
3.5
5
T
J
= 1 25
Fig. 7. Input Admittance
0.6
1 0
4.0
º
Fig. 11. Capacitance
C
T
J
0.7
= 1 25
1 5
V
V
V
- 40
4.5
SD
GS
25
DS
Voltage
º
º
º
- Volts
- Volts
C
C
- Volts
C
0.8
20
C
C
C
rss
iss
oss
5.0
T
J
0.9
25
= 25
º
5.5
C
1 .0
30
6.0
35
1 .1
6.5
1 .2
40
1 .000
0.1 00
0.01 0
0.001
1 00
90
80
70
60
50
40
30
20
1 0
1 0
0.0001
0
9
8
7
6
5
4
3
2
0
1
0
0
V
I
I
D
G
1 0
D S
= 35A
= 1 0mA
Fig. 12. Maximum Transient Thermal
40
= 300V
0.001
20
Fig. 8. Transconductance
Fig. 10. Gate Charge
Pulse Width - Seconds
80
30
Q
G
I
0.01
Impedance
40
- nanoCoulombs
D
1 20
- Amperes
IXFB70N60Q2
50
1 60
60
0.1
T
70
200
J
= - 40
IXYS REF: F _70N60Q2(95)5-28-08-A
1 25
80
25
1
240
º
º
C
º
C
C
90
280
1 00
1 0

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