IXKK85N60C IXYS, IXKK85N60C Datasheet - Page 4

• Manufacturer Part Number: IXKK85N60C
• Description: MOSFET N-CH 600V 85A TO-264
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKK85N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 650nC @ 10V
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 85
• Rds(on), Max, Tj=25°c, (?): 0.036
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 500
• Trr, Max, (ns): -
• Trr, Typ, (ns): 580
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Visol, Rms, (v): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
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0
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0.4
2
0
Fig. 9. Source Current vs. Source-To-
10
2.5
0.5
f = 1MHz
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
20
3
0.6
30
T
J
Drain Voltage
= 125ºC
3.5
V
T
V
J
40
V
-40ºC
G S
= 125ºC
S D
25ºC
0.7
DS
- Volts
- Volts
- Volts
50
4
0.8
60
4.5
70
0.9
T
J
5
C
= 25ºC
C
iss
80
C
oss
rss
5.5
1
90
100
1.1
6
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
180
160
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120
100
0.1
80
60
40
20
10
0
9
8
7
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4
3
2
1
0
0
Fig. 12. Maxim um Transient Therm al
0
0
1
T
J
V
I
I
60
30
D
G
Fig. 8. Transconductance
= -40ºC
DS
= 80A
125ºC
= 10mA
25ºC
= 350V
120
Fig. 10. Gate Charge
Pulse Width - milliseconds
60
Q
Resistance
180
10
G
90
I
- nanoCoulombs
D
- Amperes
240
120
300
IXKK 85N60C
150
360
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540
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