BSS138LT1G ON Semiconductor, BSS138LT1G Datasheet

MOSFET N-CH 50V 200MA SOT-23

BSS138LT1G

Manufacturer Part Number
BSS138LT1G
Description
MOSFET N-CH 50V 200MA SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheets

Specifications of BSS138LT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 200mA, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.1 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
200 mA
Package Type
SOT-23 (TO-236)
Polarization
N-Channel
Resistance, Drain To Source On
3.5 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
100 Millimhos
Voltage, Breakdown, Drain To Source
50 V
Voltage, Gate To Source
±20 VDC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
3.5Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Drain Current (max)
200mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSS138LT1GOSTR

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0
BSS138LT1
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
February, 2009 − Rev. 5
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature
Thermal Resistance,
Maximum Lead Temperature for
Typical applications are DC−DC converters, power management in
Low Voltage Applications
Low Threshold Voltage (V
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Packages are Available
Range
Junction−to−Ambient
Soldering Purposes, for 10 seconds
− Continuous @ T
− Pulsed Drain Current (t
Rating
A
= 25°C
(T
A
= 25°C unless otherwise noted)
p
A
Preferred Device
≤ 10 ms)
= 25°C
GS(th)
: 0.5 V−1.5 V) Makes it Ideal for
Symbol
T
V
R
J
V
I
P
, T
DSS
DM
T
I
qJA
GS
D
D
L
stg
− 55 to 150
Value
± 20
200
800
225
556
260
50
1
°C/W
Unit
mW
Vdc
Vdc
mA
°C
°C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
BSS138LT1
BSS138LT1G
BSS138LT3
BSS138LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
Device
J1
M
G
(Note: Microdot may be in either location)
CASE 318
STYLE 21
SOT−23
ORDERING INFORMATION
2
1
R
http://onsemi.com
200 mA, 50 V
= Device Code
= Date Code*
= Pb−Free Package
DS(on)
3
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
N−Channel
Publication Order Number:
= 3.5 W
3
2
1
10,000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
MARKING
DIAGRAM
J1 M G
Shipping
BSS138LT1/D
G

BSS138LT1G Summary of contents

Page 1

... DM P 225 − 150 °C J stg 556 R °C/W qJA T 260 °C L BSS138LT1 BSS138LT1G BSS138LT3 BSS138LT3G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 200 mA 3.5 W DS(on) N−Channel MARKING DIAGRAM 1 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mAdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 0 3 25° 0.7 0.6 0.5 0.4 0.3 0.2 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 2.2 2 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 2 0.05 0.1 0. DRAIN CURRENT (AMPS) D Figure 7. On−Resistance versus Drain Current 4 ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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