BSS138LT1G ON Semiconductor, BSS138LT1G Datasheet - Page 2

• Manufacturer Part Number: BSS138LT1G
• Description: MOSFET N-CH 50V 200MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of BSS138LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.1 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 200 mA
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 3.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 100 Millimhos
• Voltage, Breakdown, Drain To Source: 50 V
• Voltage, Gate To Source: ±20 VDC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 200mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS138LT1GOSTR

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Source Leakage Current (V
Gate−Source Threshold Voltage
Static Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Turn−Off Delay Time
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
DS
= 25 Vdc, V
= 50 Vdc, V
= V
= 25 Vdc, I
= 0 Vdc, I
= 2.75 Vdc, I
= 5.0 Vdc, I
GS
, I
D
D
= 1.0 mAdc)
D
D
= 250 mAdc)
GS
GS
D
= 200 mAdc, f = 1.0 kHz)
= 200 mAdc)
< 200 mAdc, T
= 0 Vdc)
= 0 Vdc)
Characteristic
GS
= ± 20 Vdc, V
A
= −40°C to +85°C)
(V
(V
(V
(T
DG
DS
DS
A
(V
= 25°C unless otherwise noted)
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
DD
= 30 Vdc, I
DS
= 0 Vdc)
http://onsemi.com
GS
GS
GS
D
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0.2 Adc,)
2
V
Symbol
V
r
(BR)DSS
DS(on)
t
t
I
C
I
C
GS(th)
C
d(on)
d(off)
DSS
GSS
g
oss
rss
iss
fs
Min
100
0.5
50
−
−
−
−
−
−
−
−
−
−
Typ
5.6
3.5
40
12
−
−
−
−
−
−
−
−
−
Max
±0.1
0.1
0.5
1.5
3.5
5.0
10
50
25
20
20
−
−
mmhos
mAdc
mAdc
Unit
Vdc
Vdc
pF
ns
W