UPA507TE-T2-A Renesas Electronics America, UPA507TE-T2-A Datasheet - Page 5

• Manufacturer Part Number: UPA507TE-T2-A
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA507TE-T2-A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOS FET ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (T
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Forward Voltage
Reverse Current
Terminal Capacitance
0
TEST CIRCUIT 1 SWITCHING TIME
GS(−)
τ = 1 s
Duty Cycle ≤ 1%
PG.
μ
τ
CHARACTERISTICS
CHARACTERISTICS
R
G
D.U.T.
μ
s, Duty Cycle ≤ 2%
Note
Note
R
V
DD
L
Note
V
Wave Form
V
Wave Form
GS
DS
I
I
V
| y
R
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
V
I
C
SYMBOL
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
R
GS(off)
DS(on)1
DS(on)2
DS(on)3
iss
oss
rss
F(S-D)
F
T
G
GS
GD
fs
V
V
|
V
GS(−)
DS(−)
0
DS
0
10%
Data Sheet G16626EJ2V0DS
t
d(on)
90%
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
V
f = 1.0 MHz, V
D
F
F
t
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
R
on
= 2.0 A, V
= 1.0 A
= −2.0 A
= 10 V
= 10 Ω
10% 10%
= −20 V, V
= −10 V, I
= −10 V, I
= −10 V,
t
=
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= 0 V,
= −10 V, I
= −4.0 V,
= −16 V,
= −4.0 V,
r
m
A
V
8 V, V
t
GS
TEST CONDITIONS
TEST CONDITIONS
d(off)
= 25°C)
GS
t
DS
D
D
D
off
R
D
D
D
90%
GS
= 0 V
= −1.0 mA
= −1.0 A
= −1.0 A,
= 10 V
= 0 V
= −1.0 A
= −1.0 A
= −1.0 A
90%
t
= 0 V
f
TEST CIRCUIT 2 GATE CHARGE
A
PG.
= 25°C)
−0.45
MIN.
MIN.
2.0
I
G
= −2 mA
50 Ω
−0.75
TYP.
TYP.
0.84
0.35
109
380
4.3
4.7
0.9
1.5
68
84
85
45
10
47
28
36
5
D.U.T.
μ
MAX.
−1.50
MAX.
PA507TE
0.38
m
120
180
200
−1
85
10
UNIT
UNIT
mΩ
mΩ
mΩ
μ
μ
nC
nC
nC
μ
pF
pF
pF
ns
ns
ns
ns
pF
V
S
V
V
A
A
A
R
V
DD
L
3