UPA507TE-T2-A Renesas Electronics America, UPA507TE-T2-A Datasheet - Page 6

• Manufacturer Part Number: UPA507TE-T2-A
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA507TE-T2-A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOS FET TYPICAL CHARACTERISTICS (T
4
- 0.01
- 100
- 0.1
- 10
120
100
- 1
80
60
40
20
0
- 0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
(at V
Single pulse
Mounted on FR-4 board of
2500 m m
R
DS(on)
V
25
GS
T
DS
A
= −4.5 V)
I
Lim ited
- Drain to Source Voltage - V
D(DC)
- Ambient Temperature - °C
2
x 1.6 m m
1000
50
100
I
10
- 1
D(pulse)
1
100
75
μ
100
1 m
- 10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW = 1 m s
125
10 m s
100 m s
5 s
150
10 m
Data Sheet G16626EJ2V0DS
- 100
175
A
= 25°C)
PW - Pulse Width - s
100 m
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Single pulse
Mounted on FR-4 board of
2500 mm
P
D
10
(FET) : P (SBD) = 1: 0
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
2
- Ambient Temperature - °C
x 1.6 mm
50
100
75
Mounted on FR-4 board of
2500 mm
100
1000
2
x 1.6 mm
125
μ
PA507TE
150
175