UPA507TE-T2-A Renesas Electronics America, UPA507TE-T2-A Datasheet - Page 7

• Manufacturer Part Number: UPA507TE-T2-A
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA507TE-T2-A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

- 0.9
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
200
150
100
- 1
- 8
- 6
- 4
- 2
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
- 0.01
0
- 50
0
Pulsed
Pulsed
V
GS
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
DS
= −1.8 V
- 0.2
ch
−2.5 V
−4.5 V
- Drain to Source Voltage - V
- Channel Temperature - °C
0
V
I
D
GS
- 0.1
- Drain Current - A
= −4.5 V
- 0.4
50
- 0.6
- 1
−2.5 V
V
I
100
D
DS
- 0.8
−1.8 V
= −1.0 mA
= −10 V
Data Sheet G16626EJ2V0DS
- 10
150
- 1
- 0.0001
- 0.001
- 0.01
- 0.1
- 10
0.1
200
150
100
10
- 1
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
- 0.01
0
FORWARD TRANSFER CHARACTERISTICS
0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
DS
D S
= −10 V
= −10 V
V
V
GS
GS
- 0.5
- 2
- Gate to Source Voltage - V
- Gate to Source Voltage - V
I
- 0.1
D
- Drain Current - A
- 4
- 1
- 1
μ
T
A
- 1.5
PA507TE
- 6
T
= 125°C
A
I
Pulsed
D
−25°C
= −25°C
75°C
25°C
= −1.0 A
125°C
25°C
75°C
- 10
- 8
- 2
5