NTMFS4936NT1G ON Semiconductor, NTMFS4936NT1G Datasheet

MOSFET N-CH 30V 11.6A SO8 FL

NTMFS4936NT1G

Manufacturer Part Number
NTMFS4936NT1G
Description
MOSFET N-CH 30V 11.6A SO8 FL
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMFS4936NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
3044pF @ 15V
Power - Max
920mW
Mounting Type
Surface Mount
Package / Case
5-DFN, SO8 FL
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
19.5 A
Power Dissipation
43 W
Forward Transconductance Gfs (max / Min)
50 S
Gate Charge Qg
43 nC
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4936NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTMFS4936N
Power MOSFET
30 V, 79 A, Single N−Channel, SO−8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2010
November, 2010 − Rev. 3
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed DrainCurrent
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
L
Minimize Conduction, Driver and Switching Losses
Recovery, Provides Schottky−Like Performance
Compliant
Low R
Next Generation Enhanced Body Diode, Engineered for Soft
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CPU Power Delivery
DC−DC Converters
qJA
qJA
qJA
qJC
= 44 A
≤ 10 s (Note 1)
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
qJA
qJA
qJA
qJC
J
, L = 0.1 mH, R
= 25°C, V
≤ 10 s
, Low Capacitance and Optimized Gate Charge to
Parameter
DD
Steady
T
State
= 50 V, V
(T
A
G
= 25°C, t
J
= 25 W)
= 25°C unless otherwise stated)
T
T
T
GS
T
T
T
T
T
T
T
T
T
T
A
A
A
C
A
A
A
A
A
A
C
C
p
A
= 100°C
= 100°C
= 100°C
= 10 V,
=100°C
= 10 ms
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
Symbol
V
I
T
dV/d
V
Dmax
E
I
T
P
P
P
P
DSS
DM
STG
T
I
I
I
I
I
GS
AS
D
D
D
D
S
J
D
D
D
D
L
,
t
−55 to
Value
+150
19.5
12.3
2.62
11.6
0.92
39.2
96.8
±20
235
100
260
8.4
7.3
6.0
30
35
22
79
50
43
1
V/ns
Unit
mJ
°C
°C
W
W
W
W
V
V
A
A
A
A
A
A
A
†For information on tape and reel specifications,
NTMFS4936NT1G
NTMFS4936NT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SO−8 FLAT LEAD
V
(BR)DSS
CASE 488AA
30 V
A
Y
WW
G
(Note: Microdot may be in either location)
Device
STYLE 1
G (4)
ORDERING INFORMATION
1
N−CHANNEL MOSFET
= Assembly Location
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
5.5 mW @ 4.5 V
4.0 mW @ 10 V
D (5,6)
R
DS(ON)
(Pb−Free)
(Pb−Free)
Package
SO−8 FL
SO−8 FL
Publication Order Number:
MAX
S (1,2,3)
G
S
S
S
MARKING
DIAGRAM
NTMFS4936N/D
AYWWG
Tape & Reel
Tape & Reel
4936N
Shipping
D
D
1500 /
5000 /
I
G
D
79 A
MAX
D
D

Related parts for NTMFS4936NT1G

NTMFS4936NT1G Summary of contents

Page 1

... G 50 (Note: Microdot may be in either location 235 100 A Dmax Device T , −55 to °C J NTMFS4936NT1G T +150 STG I 39 NTMFS4936NT3G dV/d 6 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications T 260 ° ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

140 4.0 V 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 ...

Page 5

C iss 3200 2800 2400 2000 1600 C oss 1200 800 C 400 rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 100 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 t, TIME (ms) Figure ...

Page 7

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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