NTMFS4936NT1G ON Semiconductor, NTMFS4936NT1G Datasheet - Page 5

MOSFET N-CH 30V 11.6A SO8 FL

NTMFS4936NT1G

Manufacturer Part Number
NTMFS4936NT1G
Description
MOSFET N-CH 30V 11.6A SO8 FL
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMFS4936NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
3044pF @ 15V
Power - Max
920mW
Mounting Type
Surface Mount
Package / Case
5-DFN, SO8 FL
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
19.5 A
Power Dissipation
43 W
Forward Transconductance Gfs (max / Min)
50 S
Gate Charge Qg
43 nC
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4936NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3600
3200
2800
2400
2000
1600
1200
1000
1000
0.01
800
400
100
100
0.1
10
10
0
1
1
0.1
0
1
V
SINGLE PULSE
T
V
I
V
C
Figure 11. Maximum Rated Forward Biased
GS
D
DD
GS
= 25°C
= 15 A
= 20 V
= 15 V
= 10 V
V
Figure 9. Resistive Switching Time
V
Figure 7. Capacitance Variation
5
DS
DS
Variation vs. Gate Resistance
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
R
THERMAL LIMIT
PACKAGE LIMIT
C
DS(on)
R
C
rss
G
iss
Safe Operating Area
, GATE RESISTANCE (W)
C
10
1
oss
LIMIT
10
15
10
20
TYPICAL CHARACTERISTICS
T
V
25
J
GS
= 25°C
10 ms
100 ms
1 ms
10 ms
http://onsemi.com
dc
= 0 V
t
t
t
t
d(off)
r
d(on)
f
100
100
30
5
100
10
30
25
20
15
10
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
5
0
0
0
0.4
25
Figure 10. Diode Forward Voltage vs. Current
3
Q
Drain−To−Source Voltage vs. Total Charge
V
Figure 12. Maximum Avalanche Energy vs.
T
GS
GS
J
6
, STARTING JUNCTION TEMPERATURE (°C)
V
= 0 V
0.5
SD
Figure 8. Gate−To−Source and
Q
9 12 15
T
50
Starting Junction Temperature
, SOURCE−TO−DRAIN VOLTAGE (V)
GD
J
Q
= 125°C
G
, TOTAL GATE CHARGE (nC)
0.6
18
75
Q
21 24 27
T
0.7
100
30
0.8
T
J
33 36
= 25°C
V
V
I
T
D
DD
GS
J
= 30 A
I
125
D
= 25°C
= 15 V
= 10 V
0.9
= 44 A
39
42
150
1.0
45

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