NTMFS4936NT1G ON Semiconductor, NTMFS4936NT1G Datasheet - Page 6

• Manufacturer Part Number: NTMFS4936NT1G
• Description: MOSFET N-CH 30V 11.6A SO8 FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4936NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 3044pF @ 15V
• Power - Max: 920mW
• Mounting Type: Surface Mount
• Package / Case: 5-DFN, SO8 FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 43 W
• Forward Transconductance Gfs (max / Min): 50 S
• Gate Charge Qg: 43 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SINGLE PULSE
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TYPICAL CHARACTERISTICS
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Figure 13. Thermal Response
Figure 14. GFS vs. I
http://onsemi.com
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