NTMFS4936NT1G ON Semiconductor, NTMFS4936NT1G Datasheet - Page 3

• Manufacturer Part Number: NTMFS4936NT1G
• Description: MOSFET N-CH 30V 11.6A SO8 FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4936NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 3044pF @ 15V
• Power - Max: 920mW
• Mounting Type: Surface Mount
• Package / Case: 5-DFN, SO8 FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 43 W
• Forward Transconductance Gfs (max / Min): 50 S
• Gate Charge Qg: 43 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
G
http://onsemi.com
V
3
GS
V
V
I
GS
S
I
GS
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 15 A, R
= 0 V,
Test Condition
= 10 V, V
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
0.005
10.4
0.65
21.5
17.5
0.65
1.84
Typ
8.0
0.8
1.1
19
29
39
36
Max
1.1
2.0
Unit
nH
nH
nH
ns
ns
nC
W
V