SIB411DK-T1-E3 Vishay, SIB411DK-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SIB411DK-T1-E3
• Description: MOSFET P-CH 20V 9A SC75-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIB411DK-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 8V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.066 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIB411DK-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
0.20
0.15
0.10
0.05
0.00
15
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
9
6
3
0
0.0
0
0
V
V
I
GS
GS
D
= 4.8 A
2
= 1.8 V
= 5 thru 3 V
3
V
0.5
DS
Output Characteristics
V
Q
GS
g
- Drain-to-Source Voltage (V)
I
V
D
4
- Total Gate Charge (nC)
= 2.5 V
GS
Gate Charge
- Drain Current (A)
6
= 4.5 V
V
DS
V
1.0
6
GS
= 10 V
= 16 V
9
8
1.5
12
2.5 V
10
1.5 V
2 V
2.0
15
12
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
I
V
On-Resistance vs. Junction Temperature
D
GS
C
- 25
= 3.3 A
rss
= 4.5 V, 2.5 V, 1.8 V
0.3
4
V
V
DS
GS
C
T
Transfer Characteristics
0
J
iss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
T
25
C
Capacitance
0.6
8
= 125 °C
C
oss
50
Vishay Siliconix
25 °C
0.9
12
75
SiB411DK
100
www.vishay.com
- 55 °C
1.2
16
125
150
1.5
20
3