SIB411DK-T1-E3 Vishay, SIB411DK-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SIB411DK-T1-E3
• Description: MOSFET P-CH 20V 9A SC75-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIB411DK-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 8V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.066 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIB411DK-T1-E3TR

SiB411DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
1
- 50
0
Soure-Drain Diode Forward Voltage
- 25
I
D
0.2
= 250 µA
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
T
0.4
J
J
- Temperature (°C)
= 150 °C
25
0.6
50
75
0.8
0.01
100
0.1
10
1
100
0.1
T
Limited by R
J
* V
= 25 °C
1
Safe Operating Area, Junction-to-Case
GS
125
Single Pulse
T
A
> minimum V
= 25 °C
V
DS
1.2
150
DS(on)*
- Drain-to-Source Voltage (V)
1
GS
BVDSS limited
at which R
DS(on)
1 0
0.20
0.17
0.14
0.11
0.08
0.05
20
10
15
5
0
is specified
0.001
0
10 ms
100 µs
1 ms
100 ms
1 s
DC
10 s
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
GS
T
- Gate-to-Source Voltage (V)
0.1
J =
25 °C
2
Pulse (s)
1
S-80515-Rev. C, 10-Mar-08
Document Number: 74335
3
10
T
J =
125 °C
4
100
1000
5