SIB411DK-T1-E3 Vishay, SIB411DK-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SIB411DK-T1-E3
• Description: MOSFET P-CH 20V 9A SC75-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIB411DK-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 8V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.066 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIB411DK-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
14
12
10
8
6
4
2
0
0
Package Limited
25
T
D
C
Current Derating*
is based on T
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
15
12
9
6
3
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiB411DK
www.vishay.com
125
150
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