IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet - Page 10

• Manufacturer Part Number: IRFR220,118
• Description: MOSFET N-CH 200V 4.8A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFR220,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056819118; IRFR220 /T3; IRFR220 /T3

Philips Semiconductors
10. Revision history
Table 6:
9397 750 08519
Product data
Rev Date
01
20010814
Revision history
CPCN
-
Description
Product data; initial version
Rev. 01 — 14 August 2001
N-channel enhancement mode field effect transistor
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
IRFR220
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