BUK9528-55A,127 NXP Semiconductors, BUK9528-55A,127 Datasheet - Page 5
![MOSFET N-CH 55V 42A TO220AB](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK9528-55A,127
Manufacturer Part Number
BUK9528-55A,127
Description
MOSFET N-CH 55V 42A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9628-55A118.pdf
(15 pages)
Specifications of BUK9528-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1725pF @ 25V
Power - Max
99W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
42 A
Power Dissipation
99 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
934056256127
BUK9528-55A
BUK9528-55A
BUK9528-55A
BUK9528-55A
8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07683
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
V
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
DS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 5 V; I
= 25 C
= 175 C
= 4.5 V; I
= 10 V; I
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 18 January 2001
and
Figure 12
D
BUK9528-55A; BUK9628-55A
DS
DS
G
D
8
= 15 A;
D
GS
L
= 10
= 15 A
DS
= V
= 15 A
GS
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
55
50
1
0.5
TrenchMOS™ logic level FET
Typ
1.5
0.05
2
24
22
1200
210
140
14
125
64
68
4.5
3.5
2.5
7.5
© Philips Electronics N.V. 2001. All rights reserved.
Max
2
2.3
10
500
100
28
56
30
25
1725
252
195
Unit
V
V
V
V
V
nA
m
m
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A