IRFP250 STMicroelectronics, IRFP250 Datasheet
IRFP250
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... Sep 2000 N-CHANNEL 200V - 0.073 - 33A TO-247 R I DS(on ™. The layout re- INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25°C C (1)I 33A, di/dt 300A/µ IRFP250 PowerMesh™II MOSFET TO-247 Value 200 200 ± 132 180 1.44 5 –65 to 150 150 (BR)DSS j JMAX ...
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... IRFP250 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited by T Single Pulse Avalanche Energy E AS (starting ° ...
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... GS G Test Conditions V = 160V 4 10V G GS (see test circuit, Figure 5) Test Conditions Min di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedance IRFP250 Typ. Max. Unit 117 158 Min. Typ. Max. Unit 100 ns Typ. Max. Unit 33 A 132 A 1 ...
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... IRFP250 Output Characteristics Tranconductance Gate Charge vs Gate-source Voltage 4/8 Tranfer Characteristics Static Drain-Source On Resistance Capacitance Variations ...
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... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature IRFP250 5/8 ...
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... IRFP250 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... M 2 inch MAX. MIN. TYP. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 0.429 15.9 0.602 20.3 0.776 14.8 0.559 1.362 0.217 3 0.079 IRFP250 MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.626 0.779 0.582 0.118 P025P 7/8 ...
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... IRFP250 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...