STW8NB100 STMicroelectronics, STW8NB100 Datasheet
STW8NB100
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STW8NB100 Summary of contents
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... May 2003 N-CHANNEL 1000V - 1.3 I DS(on) D 7.3 A INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25°C C (1)I 7.3A, di/dt 200A/µ STW8NB100 - 7.3A TO-247 PowerMesh™ MOSFET TO-247 Value 1000 1000 ±30 7.3 4.18 29.2 190 1.52 3.5 –65 to 150 150 ...
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... STW8NB100 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...
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... V = 10V 4 Test Conditions Min 800V 4 10V G GS (see test circuit, Figure 5) Test Conditions Min 7 di/dt = 100 A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedance STW8NB100 Typ. Max. Unit 31.5 nC Typ. Max. Unit Typ. Max. Unit 7 1.6 V 1000 ns 10.8 µC 21 ...
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... STW8NB100 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STW8NB100 5/8 ...
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... STW8NB100 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... STW8NB100 MAX. 0.20 0.10 0.03 0.05 0.09 0.13 0.62 0.79 0.17 0.58 0.11 5º 0.143 7/8 ...
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... STW8NB100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...