STW20NB50 STMicroelectronics, STW20NB50 Datasheet

MOSFET N-CH 500V 20A TO-247

STW20NB50

Manufacturer Part Number
STW20NB50
Description
MOSFET N-CH 500V 20A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STW20NB50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2662-5

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Manufacturer:
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Part Number:
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Manufacturer:
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DESCRIPTION
Using
STMicroelectronics has designed an advanced
family
performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
October 1999
STW20NB50
Symbol
DS
dv/dt(
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
DM
V
V
P
T
(on) per area, exceptional avalanche and
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
stg
DS
GS
D
D
tot
TYPE
( )
j
1
)
the
of
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
power
latest
DS(on)
500 V
V
= 0.22
DSS
Mosfets with
high
N - CHANNEL 500V - 0.22 - 20A - TO-247
voltage
< 0.25
Parameter
R
DS(on)
c
GS
= 25
GS
= 20 k )
= 0)
outstanding
o
technology,
C
c
c
20 A
= 25
= 100
I
D
o
C
o
C
o
C
(
1
) I
PowerMESH
SD
INTERNAL SCHEMATIC DIAGRAM
20A, di/dt
200 A/ s, V
-65 to 150
Value
12.7
500
500
250
150
20
80
TO-247
2
4
30
STW20NB50
DD
V
(BR)DSS
1
2
MOSFET
, Tj
3
T
JMAX
W/
V/ns
Unit
o
o
W
V
V
V
A
A
A
C
C
o
C
1/8

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STW20NB50 Summary of contents

Page 1

... T Storage Temperature stg T Max. Operating Junction Temperature Pulse width limited by safe operating area October 1999 PowerMESH I DS(on technology, outstanding INTERNAL SCHEMATIC DIAGRAM = 100 20A, di/ STW20NB50 MOSFET TO-247 Value Unit 500 V 500 12 250 V/ns o -65 to 150 C o 150 C 200 (BR)DSS JMAX ...

Page 2

... STW20NB50 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...

Page 3

... G GS (see test circuit, figure 400 Test Conditions V = 400 4 (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) Thermal Impedance STW20NB50 Min. Typ. Max. Unit 110 Min. Typ. Max. Unit Min. Typ. Max. Unit 1.6 V 700 ...

Page 4

... STW20NB50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STW20NB50 5/8 ...

Page 6

... STW20NB50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... MAX. MIN. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 15.9 0.602 20.3 0.776 14.8 0.559 5.5 3 0.079 STW20NB50 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.429 0.626 0.779 0.582 1.362 0.217 0.118 P025P 7/8 ...

Page 8

... STW20NB50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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