STW15NB50 STMicroelectronics, STW15NB50 Datasheet

MOSFET N-CH 500V 14.6A TO-247

STW15NB50

Manufacturer Part Number
STW15NB50
Description
MOSFET N-CH 500V 14.6A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STW15NB50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
14.6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2664-5

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Part Number:
STW15NB50FI
Manufacturer:
ST
Quantity:
12 500
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
June 1998
STW15NB50
STH15NB50FI
Symbol
dv/dt(
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
DM
V
V
V
T
P
DGR
I
I
30V GATE TO SOURCE VOLTAGE RATING
T
ISO
GS
stg
DS
D
D
tot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
SGS-Thomson
®
DS(on)
500 V
500 V
T0-247/ISOWATT218 PowerMESH
V
= 0.33
DSS
< 0.36
has
R
0.36
DS(on)
c
Parameter
GS
= 25
GS
designed
= 20 k )
= 0)
N-CHANNEL 500V - 0.33 - 14.6A -
o
C
14.6 A
10.5 A
c
c
= 25
= 100
I
D
an
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
TO-247
STW15NB50
14.6
58.4
0.64
190
9.2
1
2
STH15NB50FI
-65 to 150
3
Value
STW15NB50
4000
150
500
500
4
30
STH15NB50FI
ISOWATT218
10.5
58.4
1.52
6.6
80
MOSFET
1
W/
Unit
V/ns
2
o
o
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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STW15NB50 Summary of contents

Page 1

... Max. Operating Junction Temperature j June 1998 N-CHANNEL 500V - 0.33 - 14. DS(on) D 14.6 A 0.36 10.5 A designed an INTERNAL SCHEMATIC DIAGRAM Parameter = 100 STW15NB50 STH15NB50FI MOSFET TO-247 ISOWATT218 Value STW15NB50 STH15NB50FI 500 500 30 14.6 10.5 9.2 6.6 58.4 58.4 190 80 0.64 1.52 4 4000 -65 to 150 150 Unit V/ ...

Page 2

... STW15NB50 - STH15NB50FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF ...

Page 3

... Test Conditions V = 400 4 (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) Safe Operating Area for ISOWATT218 STW15NB50 - STH15NB50FI Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 14.6 A 58.4 A 1.6 V 680 ...

Page 4

... STW15NB50 - STH15NB50FI Thermal Impedance for TO-247 Output Characteristics Transconductance 4/9 Thermal Impedance for ISOWATT218 Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STW15NB50 - STH15NB50FI Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STW15NB50 - STH15NB50FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... TYP. A 4.7 D 2 10.9 H 15.3 L 19.7 L3 14.2 L4 34 Dia 3.55 STW15NB50 - STH15NB50FI inch MAX. MIN. TYP. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 0.429 15.9 0.602 20.3 0.776 14.8 0.559 0.413 1.362 0.217 3 0.079 3 ...

Page 8

... STW15NB50 - STH15NB50FI ISOWATT218 MECHANICAL DATA DIM. MIN. A 5.35 C 3.3 D 2.9 D1 1.88 E 0.75 F 1.05 G 10.8 H 15.8 L1 20.8 L2 19.1 L3 22.8 L4 40.5 L5 4.85 L6 20.25 M 3 8/9 mm TYP. MAX. MIN. 5.65 0.210 3.8 0.130 3.1 0.114 2.08 0.074 1 0.029 1.25 0.041 11.2 0.425 16.2 ...

Page 9

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES . STW15NB50 - STH15NB50FI 9/9 ...

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