STY34NB50 STMicroelectronics, STY34NB50 Datasheet - Page 3
STY34NB50
Manufacturer Part Number
STY34NB50
Description
MOSFET N-CH 500V 34A MAX247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STY34NB50.pdf
(8 pages)
Specifications of STY34NB50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
223nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
450W
Mounting Type
Through Hole
Package / Case
MAX247™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2680-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STY34NB50
Manufacturer:
LT
Quantity:
1 001
Company:
Part Number:
STY34NB50F
Manufacturer:
ST
Quantity:
3 000
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 34 A
= 34 A
= 250 V
= 400 V
= 400 V I
= 100 V
Test Conditions
Test Conditions
Test Conditions
V
D
GS
= 34 A V
= 0
di/dt = 100 A/ s
Thermal Impedance
T
V
j
GS
V
= 150
GS
I
D
GS
I
D
= 10 V
= 34 A
= 10 V
= 17 A
= 10 V
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
159
120
950
46
32
35
67
56
53
12
25
Max.
Max.
Max.
STY34NB50
223
168
136
1.6
64
45
78
74
34
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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