IRF820 STMicroelectronics, IRF820 Datasheet - Page 3

• Manufacturer Part Number: IRF820
• Description: MOSFET N-CH 500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF820

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2733-5

IRF820
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2.
Table 2.
Table 3.
Rthj-case Thermal resistance junction-case max
Rthj-amb
Rthc-sink Thermal resistance case-sink typ
Symbol
Symbol
dv/dt
I
V
DM
P
V
I
E
V
T
I
SD
DGR
I
I
TOT
AR
T
T
GS
DS
stg
AS
D
D
j
l
(1)
≤ 2.5A, di/dt £50A/µs, V
(2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuos) at t
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25 °C, I
DD
≤ V
Parameter
(BR)DSS
C
D
GS
Parameter
= 25°C
= I
GS
j
= 20 kW)
max)
AR
, T
= 0)
, V
j
c
£ T
C
= 25°C
DD
= 100°C
JMAX
= 50 V)
.
–65 to 150
1.56
62.5
Value
300
0.5
0.64
Max Value
500
500
±30
150
2.5
3.5
12
80
4
210
4
Electrical ratings
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
A
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