IRF820 STMicroelectronics, IRF820 Datasheet - Page 6
![MOSFET N-CH 500V 4A TO-220](/photos/1/39/13943/to-220_sml.jpg)
IRF820
Manufacturer Part Number
IRF820
Description
MOSFET N-CH 500V 4A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.IRF820.pdf
(12 pages)
Specifications of IRF820
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
315pF @ 25V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2733-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF820
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
IRF820
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
IRF820 FAIRCHILD
Manufacturer:
FAIRCHILD
Quantity:
5 000
Company:
Part Number:
IRF820A
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF820AL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF820APBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF820B
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
IRF820PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Electrical characteristics
2.1
6/12
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characterisics
Transconductance
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
IRF820