IRF530 STMicroelectronics, IRF530 Datasheet - Page 2

• Manufacturer Part Number: IRF530
• Description: MOSFET N-CH 100V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of IRF530

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 458pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2780-5

IRF530
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/8
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
(*)
g
I
I
C
DS(on)
C
GS(th)
C
GSS
DSS
fs
T
oss
rss
iss
l
(*)
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
case
I
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
DS
DS
= 25 °C unless otherwise specified)
= 250 µA, V
= Max Rating
= Max Rating T
= V
= 15 V
= 25V, f = 1 MHz, V
= ± 20 V
= 10 V
Test Conditions
Test Conditions
Test Conditions
GS
GS
I
= 0
D
I
D
I
D
= 7 A
C
= 250 µA
= 7 A
= 100°C
GS
Max
Max
= 0
Min.
Min.
Min.
100
2
62.5
0.115
300
2.5
Typ.
Typ.
Typ.
458
68
29
3
7
Max.
±100
Max.
Max.
0.16
10
1
4
°C/W
°C/W
°C
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
V
V
S