STW11NB80 STMicroelectronics, STW11NB80 Datasheet
STW11NB80
Specifications of STW11NB80
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STW11NB80 Summary of contents
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... T Storage Temperature stg T Max. Operating Junction Temperature Pulse width limited by safe operating area July 1999 PowerMESH I DS(on INTERNAL SCHEMATIC DIAGRAM Parameter = 100 11A, di/dt SD STW11NB80 MOSFET TO-247 Value 800 800 30 11 6.9 44 190 1. -65 to 150 150 200A (BR)DSS JMAX Unit ...
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... STW11NB80 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...
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... Pulse width limited by safe operating area Safe Operating Area Test Conditions V = 400 4 640 4 Test Conditions V = 640 4 Test Conditions di/dt = 100 100 150 Thermal Impedance STW11NB80 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 1.6 V 900 3/8 ...
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... STW11NB80 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STW11NB80 5/8 ...
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... STW11NB80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... MAX. MIN. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 15.9 0.602 20.3 0.776 14.8 0.559 5.5 3 0.079 STW11NB80 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.429 0.626 0.779 0.582 1.362 0.217 0.118 P025P 7/8 ...
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... STW11NB80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...