IRF620 STMicroelectronics, IRF620 Datasheet

MOSFET N-CH 200V 6A TO-220

IRF620

Manufacturer Part Number
IRF620
Description
MOSFET N-CH 200V 6A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of IRF620

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3135

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Order codes
General features
Description
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns swithing
speed, gate charge and ruggedness.
Applications
August 2006
Extremely high dv/dt capability
100% avalanche tested
New high voltage benchmark
Gate charge minimized
Switching application
IRF620FP
IRF620
Type
Part number
IRF620FP
IRF620
(@Tjmax)
V
200V
200V
DSS
N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP
R
<0.8Ω
<0.8Ω
DS(on)
Marking
IRF620
IRF620
6A
6A
I
D
Rev 6
PowerMESH™ II Power MOSFET
Internal schematic diagram
TO-220
TO-220FP
Package
TO-220
1
2
3
IRF620FP
TO-220FP
Packaging
Tube
Tube
IRF620
1
www.st.com
2
3
1/14
14

Related parts for IRF620

IRF620 Summary of contents

Page 1

... Order codes Part number IRF620 IRF620FP August 2006 N-channel 200V - 0.6Ω TO-220/TO-220FP PowerMESH™ II Power MOSFET R I DS(on) D <0.8Ω 6A <0.8Ω 6A Internal schematic diagram Marking IRF620 IRF620 Rev 6 IRF620 IRF620FP TO-220 TO-220FP Package Packaging TO-220 Tube TO-220FP Tube 1/14 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 IRF620 - IRF620FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... IRF620 - IRF620FP 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope V Insulation winthstand voltage (DC) ...

Page 4

... 10V Parameter Test conditions V > D(on =25V, f=1 MHz 100V 4.7Ω (see Figure 14) V =160V =10V GS IRF620 - IRF620FP Min. Typ. Max 200 100 ± = 250µ 0.6 0.8 Min. Typ. Max. DS(on)max, 1.5 350 = 3A 10V 4.5 7.5 Unit V µA µ ...

Page 5

... IRF620 - IRF620FP Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 3. Safe operating area for TO-220/FP Figure 5. Output characterisics 6/14 Figure 2. Thermal impedance for TO-220 Figure 4. Thermal impedance for TO-220/FP Figure 6. Transfer characteristics IRF620 - IRF620FP ...

Page 7

... IRF620 - IRF620FP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 ...

Page 8

... Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/14 IRF620 - IRF620FP ...

Page 9

... IRF620 - IRF620FP 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive load test circuit Figure 19. Switching time waveform ...

Page 10

... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/14 IRF620 - IRF620FP www.st.com ...

Page 11

... IRF620 - IRF620FP DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Package mechanical data inch MIN ...

Page 12

... IRF620 - IRF620FP inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.204 0.094 ...

Page 13

... IRF620 - IRF620FP 5 Revision history Table 7. Revision history Date 05-Sep-2004 03-Aug-2006 Revision 2 Complete document 3 New template, no content change Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF620 - IRF620FP ...

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